STUDY OF THE INTER-BAND TRANSITION OF THE GaAs SINGLE-CRYSTAL FILM ON SrTiO3 SUBSTRATE BY MBE | Zendy

Yidong Chen | Zendy; Xingquan Liu | Zendy; Lü Wei | Zendy; Guoliang Shi | Zendy; Xuechu Shen | Zendy; Qiuchen Zhao | Zendy; M. Willander | Zendy

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STUDY OF THE INTER-BAND TRANSITION OF THE GaAs SINGLE-CRYSTAL FILM ON SrTiO3 SUBSTRATE BY MBE

Author(s) -

Yidong Chen,

Xingquan Liu,

Lü Wei,

Guoliang Shi,

Xuechu Shen,

Qiuchen Zhao,

M. Willander

Publication year - 1999

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.48.1718

Subject(s) - molecular beam epitaxy , materials science , substrate (aquarium) , photoluminescence , band gap , optoelectronics , epitaxy , perovskite (structure) , crystal (programming language) , single crystal , spectroscopy , oxide , optics , crystallography , nanotechnology , chemistry , physics , computer science , oceanography , layer (electronics) , quantum mechanics , geology , programming language , metallurgy

This paper reports the molecular beam epitaxy growth of the GaAs single crystal film on the perovskite oxide SrTiO3(001) substrate. The photo modulated reflectance spectroscopy and the photoluminescence measurement show that the energy band gap

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