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STUDY OF THE INTER-BAND TRANSITION OF THE GaAs SINGLE-CRYSTAL FILM ON SrTiO3 SUBSTRATE BY MBE
Author(s) -
Chen Yi-Dong,
Xingquan Liu,
Wei Lu,
Guoliang Shi,
Xuechu Shen,
Qiang Zhao,
Magnus Willander
Publication year - 1999
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.48.1718
Subject(s) - molecular beam epitaxy , materials science , substrate (aquarium) , photoluminescence , band gap , optoelectronics , epitaxy , perovskite (structure) , crystal (programming language) , single crystal , spectroscopy , oxide , optics , crystallography , nanotechnology , chemistry , physics , computer science , oceanography , layer (electronics) , quantum mechanics , geology , programming language , metallurgy
This paper reports the molecular beam epitaxy growth of the GaAs single crystal film on the perovskite oxide SrTiO3(001) substrate. The photo modulated reflectance spectroscopy and the photoluminescence measurement show that the energy band gap

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