Open AccessSTRUCTURAL AND OPTICAL PROPERTIES OF SELF-ASSEMBLED InAs QUANTUM DOTS GROWN ON GaAs(311) A SUBSTRATE
Author(s) -
姜卫红,
许怀哲,
Gong Qian,
徐波,
王吉政,
周伟,
梁基本,
王占国
Publication year - 1999
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.48.1541
Subject(s) - quantum dot , laser linewidth , materials science , wetting layer , substrate (aquarium) , redshift , full width at half maximum , condensed matter physics , photoluminescence , wetting , layer (electronics) , optoelectronics , molecular physics , nanotechnology , optics , physics , laser , composite material , oceanography , geology , quantum mechanics , galaxy
We report the structural and optical characteristics of InAs quantum dots (QDs) grown on GaAs (311)A substrates. Atomic force microscopic result shows that QDs on (311)A surface exhibit a nonconventional, faceted, arrowhead-like shapes aligned in the [233] direction. The photolumi-nescence (PL) intensity, peak position and the full width at half maxinum (FWHM) are all colsely related to the measurement temperature. The fast redshift of PL energy and monotonous decrease of linewidth with increasing temperature were observed and explained by carriers being thermally activated to the barrier produced by the wetting layer and then being retrapped and recombined in energetically lower-lying QDs states. This model explains our results well.