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RELATION BETWEEN IRREVERSIBILITY LINE AND VORTEX-GLASS LINE IN EPITAXIAL YBa2Cu3O7-δ THIN FILMS
Author(s) -
Zhihe Wang,
Xun Cao,
Jun Fang,
Zhiyou Chen,
Kebin Li
Publication year - 1999
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.48.154
Subject(s) - condensed matter physics , vortex , line (geometry) , electrical resistivity and conductivity , resistive touchscreen , materials science , isothermal process , perpendicular , epitaxy , thin film , physics , mechanics , thermodynamics , composite material , nanotechnology , electrical engineering , geometry , quantum mechanics , mathematics , layer (electronics) , engineering
We have measured in detail the resistive transition and the isothermal current-voltage curves in the case of applied magnetic field parallel and perpendicular to the surface of the film up to 10T for an epitaxial YBa2Cu3O7-δ thin film, respectively. The comparative study of the irreversibility line from the R-T curves with the vortex-glass line from the I-V curves was made. The results showed that the irreversibility line determined from the different reduced resistivity criterion and vortex-glass line follow the same power law, H∝(T(0)-T(H))n, and n=4/3 for the vortex-glass line, n=3/2 for the irreversibility line. The irreversibility line is dependent not only on the different reduced resistivity criterion but also on the measuring current density. The vortex-glass line lies below the irreversibility line. The possible origin of the difference between such two lines was discussed.

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