Open AccessMECHANISM OF ELECTROLUMINESCENCE FROM a-Si:H AND STUDIES OF DEFECT ENERGY DISTRIBUTION IN INTRINSIC LAYER OF a-Si:H SOLAR CELLS BY ELECTROLUMINESCENCE SPECTRA
Author(s) -
Daxing Han,
Wanlu Wang,
Zhi Zhang
Publication year - 1999
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.48.1484
Subject(s) - electroluminescence , materials science , diode , luminescence , spectral line , amorphous silicon , layer (electronics) , amorphous solid , silicon , optoelectronics , silane , recombination , solar cell , crystalline silicon , nanotechnology , crystallography , chemistry , physics , composite material , biochemistry , astronomy , gene
The features of the electroluminescence spectra in amorphous silicon p-i-n diodes were ecxellently explained by dispersive-transport-controlled recombination. The misunderstanding to the efficiency and peak position of the electroluminescence for many yera was thereby clarified by the theory. The experimental methods of local states in the intrinsic layer of a-Si-H solar cells studied by the electro-luminescence were described in detail. The studied results showed that the defect energy distribution exhibited a single narrow peak when the samples were prepared by diluted silane using hydrogen, while the defect energy distribution was wider with double peaks in the samples deposited by pure silane.