INVESTIGATION ON THE DEPOSITION PROCESS OF SILICON NITRIDE THIN FILM PREPARED BY ECR-PECVD | Zendy

Junfang Chen | Zendy; WU Xian-qiu | Zendy; Deqiu Wang | Zendy; Ding Zhen-feng | Zendy; Ren Zhao-xing | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

INVESTIGATION ON THE DEPOSITION PROCESS OF SILICON NITRIDE THIN FILM PREPARED BY ECR-PECVD

Author(s) -

Junfang Chen,

WU Xian-qiu,

Deqiu Wang,

Ding Zhen-feng,

Ren Zhao-xing

Publication year - 1999

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.48.1309

Subject(s) - plasma enhanced chemical vapor deposition , materials science , thin film , silicon nitride , deposition (geology) , plasma , silicon , nitride , optoelectronics , composite material , layer (electronics) , nanotechnology , physics , paleontology , sediment , biology , quantum mechanics

The spatial distribution of the ECR plasma density has been measured by using an eccentric Langmuir probe. The result indicates that the plasma density is very uniform in the axis Z=50 cm and radial Φ=12 cm. Effect of the radial uniformity of plasma density on the uniformity of deposition rate and thin film thickness is analyzed. The repeatability to prepare silicon nitride thin film of a specified thickness is discussed. The relation of the deposition process with the deposition rate of silicon nitride thin film is investigated and the dependence of the practical application on process parameters has been obtained for the deposition thin film with ECR-PECVD technology.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research