Open AccessINVESTIGATION ON THE DEPOSITION PROCESS OF SILICON NITRIDE THIN FILM PREPARED BY ECR-PECVD
Author(s) -
Junfang Chen,
WU Xian-qiu,
Deqiu Wang,
Zhiyong Ding,
Zhoupeng Ren
Publication year - 1999
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.48.1309
Subject(s) - plasma enhanced chemical vapor deposition , materials science , thin film , silicon nitride , deposition (geology) , plasma , silicon , nitride , optoelectronics , composite material , layer (electronics) , nanotechnology , physics , paleontology , sediment , biology , quantum mechanics
The spatial distribution of the ECR plasma density has been measured by using an eccentric Langmuir probe. The result indicates that the plasma density is very uniform in the axis Z=50 cm and radial Φ=12 cm. Effect of the radial uniformity of plasma density on the uniformity of deposition rate and thin film thickness is analyzed. The repeatability to prepare silicon nitride thin film of a specified thickness is discussed. The relation of the deposition process with the deposition rate of silicon nitride thin film is investigated and the dependence of the practical application on process parameters has been obtained for the deposition thin film with ECR-PECVD technology.