Open AccessINFLUENCE OF RELAXATION ON THE SURFACE ELECTRONIC STATES OF ZnTe(110)
Author(s) -
Bo Ma,
Yu Jia,
Fan Xi-Qing
Publication year - 1998
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.47.970
Subject(s) - surface states , electronic structure , materials science , formalism (music) , condensed matter physics , band gap , electronic band structure , surface (topology) , semimetal , valence band , conduction band , scattering , valence (chemistry) , quasi fermi level , molecular physics , physics , optics , electron , quantum mechanics , geometry , mathematics , art , musical , visual arts
The results of a theoretical study of the electronic structure of the Ⅱ-Ⅵ compound ZnTe are presented. The bulk electronic structure is described by the nearest neighbor tight binding formalism. Using the scattering theory method, we have obtained wavevector-resolved surface densities of states and the surface band structure. There are no surface states in the gap. Surface states and resonances in the valence band and conduction band regions show resemblance with those of relaxed(110) surface of Ⅲ-Ⅴ compounds and the Ⅱ-Ⅵ compounds. The results are in good agreement with other theoretical studies.