Open AccessCHARACTERISTIC ELECTRON ENERGY LOSS SPECTRA IN SiC BURIED LAYERS FORMED BY C+ IMPLANTATION INTO CRYSTALLINE SILICON
Author(s) -
Yan Hui,
Guanghua Chen,
Stan Hok-Wui Wong,
R. W. M. Kwok
Publication year - 1998
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.47.876
Subject(s) - materials science , x ray photoelectron spectroscopy , silicon , spectral line , electron energy loss spectroscopy , ion , vacuum arc , electron , crystalline silicon , ion implantation , metal , silicon carbide , atomic physics , carbon fibers , analytical chemistry (journal) , optoelectronics , transmission electron microscopy , nanotechnology , composite material , nuclear magnetic resonance , chemistry , cathode , composite number , physics , organic chemistry , astronomy , quantum mechanics , chromatography , metallurgy
SiC buried layers were snythesized by a metal vapor vacuum arc ion source,with C+ ions implanted into crystalline Si substrates.According to X-ray photoelectron spectroscopy,the characteristic electron energy loss spectra of the SiC buried layers were studied.It was found that the characteristic electron energy loss spectra depend on the profiles of the carbon content,and correlate well with the order of the buried layers.