Open AccessSHUBNIKOV-DE HAAS OSCILLATIONS IN PSEUDOMORPHIC MODULATION-DOPED InGaAs/InAlAs HETEROSTRUCTURE
Author(s) -
Jianxin Chen,
Aizhen Li,
Ren Yao-Cheng,
K.Friedland
Publication year - 1998
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.47.796
Subject(s) - heterojunction , fermi gas , materials science , molecular beam epitaxy , doping , quantum well , oscillation (cell signaling) , modulation (music) , shubnikov–de haas effect , condensed matter physics , optoelectronics , epitaxy , layer (electronics) , electron , quantum oscillations , physics , chemistry , nanotechnology , optics , laser , biochemistry , quantum mechanics , acoustics
Shubnikov-de Haas (SdH) oscillation and quantum Hall effect measurements on pseudomorphic InGaAs/InAlAs modulation doped heterostructure,grown by gas source molecular beam epitaxy,have been carried out to investigate the magetotransport properties of the two-dimensional electron gas in the strained InGaAs quantum well.The SdH measurements at 0.3K demonstrated the existence of a quasi-two-dimensional electron gas in the pseudomorphic InGaAs/InAlAs heterostructure.The fast Fourier transformation results for the SdH data clearly indicate the occupation of two subbands in InGaAs strained quantum well.Comparison between SdH data on the structure with undoped InGaAs cap layer and the structure with heavily Si doped cap layer reveals that different doping in cap layer has large effect on the parallel conductance of the modulation doped structure.