Open AccessRESONANT TUNNELING THROUGH NANO-SIZE QUANTUM DOT EMBEDDED IN AMORPHOUS TISSUES
Author(s) -
Ming Liu,
Ziou Wang,
Yi He,
Jiang Xing-Liu
Publication year - 1998
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.47.699
Subject(s) - quantum tunnelling , quantum dot , materials science , amorphous solid , resonant tunneling diode , silicon , diode , condensed matter physics , nano , amorphous silicon , quantum , matrix (chemical analysis) , optoelectronics , nanotechnology , physics , quantum well , crystalline silicon , quantum mechanics , crystallography , composite material , chemistry , laser
The diode consisting of nano-silicon quantum dots embedded in an amorphous silicon matrix was fabricated and the discontinuous staircases on its I-V curves were observed.There were two distinct regimes on I-V curves of diode:(i) the sequential tunneling regime,where current increased monotonously with increasing negative bias;(ii) the resonant tunneling regime,where the current increased dramatically with increasing negative bias,and three quantum staircases appeared.It was found that the steps was related to the grains of the deposited film.The qualitative explanation of this physical phenomenon was proposed in terms of the material structural characteristics.