Open AccessSTUDY OF B+-IMPLANTED HgCdTe UNDER RAPID THERMAL ANNEALING
Author(s) -
Jialu Liu,
Zhang Ting-Qing,
Feng Jian-Hua,
Zhou Guan-Shan,
Ying Ming-Jiong
Publication year - 1998
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.47.47
Subject(s) - materials science , auger electron spectroscopy , annealing (glass) , auger , optoelectronics , spectroscopy , secondary ion mass spectroscopy , ion implantation , metal , analytical chemistry (journal) , ion , silicon , chemistry , atomic physics , composite material , organic chemistry , quantum mechanics , chromatography , nuclear physics , metallurgy , physics
Hg loss of B+-implanted HgCdTe with and without a ZnS film under rapid thermal annealing(RTA) has been analysed by secondary ion mass spectroscopy and Auger electron spectroscopy in detail- The temperatures for RTA are 300, 350 and 400℃, and the duration is 10s- The thickness of ZnS film is 160nm- Results obtained show that the surface layer of HgCdTe with a ZnS film does not show Hg loss after RTA (300℃,10s)- The procedure of RTA for B+-implanted HgCdTe forming N+-P junction has been optimized- It was shown that RTA carried out after the lithography of the metal electrode can improve the junction characteristics-