STUDY OF B+-IMPLANTED HgCdTe UNDER RAPID THERMAL ANNEALING | Zendy

Jialu Liu | Zendy; ZHANG TING-QING | Zendy; FENG JIAN-HUA | Zendy; ZHOU GUAN-SHAN | Zendy; YING MING-JIONG | Zendy

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STUDY OF B+-IMPLANTED HgCdTe UNDER RAPID THERMAL ANNEALING

Author(s) -

Jialu Liu,

ZHANG TING-QING,

FENG JIAN-HUA,

ZHOU GUAN-SHAN,

YING MING-JIONG

Publication year - 1998

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.47.47

Subject(s) - materials science , auger electron spectroscopy , annealing (glass) , auger , optoelectronics , spectroscopy , secondary ion mass spectroscopy , ion implantation , metal , analytical chemistry (journal) , ion , silicon , chemistry , atomic physics , composite material , organic chemistry , quantum mechanics , chromatography , nuclear physics , metallurgy , physics

Hg loss of B+-implanted HgCdTe with and without a ZnS film under rapid thermal annealing(RTA) has been analysed by secondary ion mass spectroscopy and Auger electron spectroscopy in detail- The temperatures for RTA are 300, 350 and 400℃, and the duration is 10s- The thickness of ZnS film is 160nm- Results obtained show that the surface layer of HgCdTe with a ZnS film does not show Hg loss after RTA (300℃,10s)- The procedure of RTA for B+-implanted HgCdTe forming N+-P junction has been optimized- It was shown that RTA carried out after the lithography of the metal electrode can improve the junction characteristics-

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