Open AccessXPS STUDIES OF CeO2/Nb2O5 INTERFACE EFFECT ON THE IMPROVEMENT OF THE OXYGEN SENSITIVITY OF CeO2 LAYER
Author(s) -
Xiaolong Du,
Zhenxiang Liu,
Kun Xie,
Yanbin Wang,
Chu Wuyang
Publication year - 1998
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.47.2025
Subject(s) - x ray photoelectron spectroscopy , materials science , layer (electronics) , sputtering , oxygen , analytical chemistry (journal) , sputter deposition , chemical engineering , thin film , nanotechnology , chemistry , organic chemistry , engineering , chromatography
The CeO2 single layer and CeO2/Nb2O5 double-layer films have been deposited on a Al2O3 ceramic substrates by a reactive rf/dc sputtering magnetron system. The variation of kinetic behavior of oxygen in CeO2 single layer with temperatures, and also the influence of CeO2/Nb2O5 interface on oxygen sensitivity of the films have been studied by XPS. X-ray photoelectron spectra of Ce3d core level were deconvoluted by Gaussian function for calculating the different concentration of Ce3+ and Ce4+ in the films. The results have shown that the CeO2/Nb2O5 double-layer could improve reduction capability of Ce4+ easily due to the interface effect, so that the reduction capability is higher in CeO2/Nb2O5 double-layer than they were in CeO2 single layer.