Open AccessXPS INVESTIGATION OF INTERFACE CHARACTERISTICS IN Au/GaP CONTACT SYSTEM
Author(s) -
Xiao Lin
Publication year - 1998
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.47.2018
Subject(s) - materials science , annealing (glass) , x ray photoelectron spectroscopy , semiconductor , band gap , metal , atomic diffusion , condensed matter physics , chemical physics , chemical engineering , crystallography , optoelectronics , metallurgy , chemistry , physics , engineering
The variation of interface structure and composition with heat treatment temperature in Au-GaP contact system are investigated by X-ray photo-emission spectroscopy. The experimental results show that the diffusion and migration between the metal and semiconductor have taken place even if at room temperature. Annealing of Au-GaP contact leads to GaP decomposition in the interface accompanied by rapid atomic interdiffusion. During the increase of temperature the interreaction of Au-Ga atoms is enhanced and AuGa multiphase composition compounds are formed. The interfaces of Au-GaP contact system are an alloying regrowth layer containing metal and semiconductor atoms. The temperature dependence of interface characteristics are discussed from the point of view of Metallurgy.