Open AccessTHIN FILMS OF Sb GROWN BY MOLECULAR BEAM EPITAXY AND THE QUANTUM SIZE EFFECT
Author(s) -
Xinjian Yi,
Yi Li,
Jian Hao,
Xinyu Zhang,
George K. Wong
Publication year - 1998
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.47.1896
Subject(s) - molecular beam epitaxy , materials science , van der pauw method , thin film , substrate (aquarium) , transmission electron microscopy , electron diffraction , epitaxy , electrical resistivity and conductivity , optoelectronics , quantum well , diffraction , optics , hall effect , nanotechnology , layer (electronics) , physics , oceanography , quantum mechanics , laser , geology
Thin film of Sb(111) was grown on GaAs(001) substrate by molecular beam epitaxy. The growth process of the film was characterized in-situ by reflective high energy electron diffraction and the film structure was investigated by transmission electron microscrope. The resistivity as a function of growth temperature was measured by van de Pauw method. We have observed the quantum size effect in Sb film grown on GaAs substrate.