Open AccessAN INCIPIENT EDGE DISLOCATION IN EPITAXIAL WURTZITE GaN
Author(s) -
Shaoqing Wang,
Liu Quan-Pu,
Hengqiang Ye
Publication year - 1998
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.47.1858
Subject(s) - wurtzite crystal structure , epitaxy , materials science , dislocation , condensed matter physics , enhanced data rates for gsm evolution , crystallography , atom (system on chip) , partial dislocations , nanotechnology , physics , chemistry , layer (electronics) , telecommunications , computer science , composite material , zinc , metallurgy , embedded system
A structural defect of incipient edge dislocation in epitaxial wurtzite GaN film is confirmed in this paper. The defect is observed as an isolated (1120) boundary segment within one large perfect crystal area by high-resolution electron microscopy. It has the local atom configuration as a part of (1120) high-energy like-atom bonding boundary together with two 1/61120 partial edge dislocations at its two ends. The origin of the defect is explored from the mechanism of epitaxial growth.