Open AccessSTUDY OF PHOTOLUMINESCENCE SPECTRUM IN p-TYPE α-POROUS SILICON CARBIDE
Author(s) -
Du Ying-Lei,
Ki-Hwan Lee,
Wu Bai-Mei,
Jin Yong-You
Publication year - 1998
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.47.1747
Subject(s) - photoluminescence , materials science , porous silicon , silicon carbide , etching (microfabrication) , spectral line , carbide , silicon , porous medium , emission spectrum , porosity , photoluminescence excitation , analytical chemistry (journal) , excitation , optoelectronics , nanotechnology , composite material , physics , chemistry , layer (electronics) , chromatography , astronomy , quantum mechanics
The photoluminescence (PL) spectra from p-type α-porous silicon carbides prepared under UV photo-assisted process and under dark-current condition are investigated in detail. Emission bands with peak energies of 2.35, 2.50,2.70, and 3.43 are resolved. The PL stability in time and the PL difference arising from different tuning excitation energies are studied. It is found that the PL spectra of the α-porous silicon carbide depend strongly on the preparation conditions for electrochemical etching. The PL spectrum of the sample prepared under photo-assisted process has an enhancement on the lower-energy side of the emission; on the contray, another one under dark-current condition has an enhancement at the higher energy side, and the former stability is better than the latter one, and the latter PL intensity decreases with the increase of the time in the air. The reasons about these differences are discussed.