Open AccessPHOTOLUMINESCENCE OF Er IN SiOx
Author(s) -
Jun Wan,
Sheng Chen,
Fang Lü,
Dunwei Gong,
Fan Ye,
Feng Liu,
Xun Wang
Publication year - 1998
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.47.1741
Subject(s) - photoluminescence , materials science , annealing (glass) , auger , erbium , atmospheric temperature range , molecular beam epitaxy , activation energy , doping , optoelectronics , epitaxy , wavelength , atomic physics , nanotechnology , chemistry , physics , layer (electronics) , meteorology , composite material
Erbium-doped SiOx is prepared by molecular beam epitaxy. The influence of Er on the incorporation of O is studied by using Auger specstrocopy. Photoluminescence(PL) peaks around the wavelength of 1.53μm have been observed within the temperature range of 18 to 300 K after annealing. The relationship between PL intensity and annealing temperature is discussed. The temperature dependence of the PL intensity shows an exponential decay with an activation energy of 12 meV at low temperatures (100 K) and 150 meV at high temperatures (100K).