Open AccessELECTRONIC STRUCTURE OF THE ZnSe/GaAs(100) INTERFACES
Author(s) -
Shie Yang,
Bo Ma,
Jun Yu,
Shigang Shen,
Fan Xi-Qing
Publication year - 1998
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.47.1704
Subject(s) - electronic structure , materials science , valence band , band gap , formalism (music) , condensed matter physics , electronic band structure , polar , scattering , interface (matter) , molecular physics , physics , optoelectronics , optics , quantum mechanics , art , musical , composite material , capillary number , capillary action , visual arts
We present results of a theoretical calculation of the electronic structure of the two polar ZnSe/GaAs(100) interfaces. The bulk electronic structure is described by the nearest neighbor tight binding formalism. Using the scattering theoretical method, we have obtained wave vector-resolved interface layer densities of states and the interface band structure. For both Se/Ga and As/Zn interfaces, there exist no interface states in the fundamental gap, but there are three interface bands and four semi-resonance bands in the valence-band region. Finally, we study the nature and origins of these bands by analysing orbital-resolved layer densities of states.