ELECTRONIC STRUCTURE OF THE ZnSe/GaAs(100) INTERFACES | Zendy

Shi-e Yang | Zendy; MA BING-XIAN | Zendy; JIA YU | Zendy; SHEN SAN-GUO | Zendy; FAN XI-QING | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

ELECTRONIC STRUCTURE OF THE ZnSe/GaAs(100) INTERFACES

Author(s) -

Shi-e Yang,

MA BING-XIAN,

JIA YU,

SHEN SAN-GUO,

FAN XI-QING

Publication year - 1998

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.47.1704

Subject(s) - electronic structure , materials science , valence band , band gap , formalism (music) , condensed matter physics , electronic band structure , polar , scattering , interface (matter) , molecular physics , physics , optoelectronics , optics , quantum mechanics , art , musical , composite material , capillary number , capillary action , visual arts

We present results of a theoretical calculation of the electronic structure of the two polar ZnSe/GaAs(100) interfaces. The bulk electronic structure is described by the nearest neighbor tight binding formalism. Using the scattering theoretical method, we have obtained wave vector-resolved interface layer densities of states and the interface band structure. For both Se/Ga and As/Zn interfaces, there exist no interface states in the fundamental gap, but there are three interface bands and four semi-resonance bands in the valence-band region. Finally, we study the nature and origins of these bands by analysing orbital-resolved layer densities of states.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research