Open AccessELECTRONIC STRUCTURE OF As ON InP(110) SURFACE STUDIED THEORETICALLY
Author(s) -
王松有,
石寿珠,
马丙现,
陈良尧
Publication year - 1998
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.47.1695
Subject(s) - brillouin zone , tight binding , surface (topology) , electronic structure , materials science , monolayer , adsorption , scattering , surface states , condensed matter physics , molecular physics , chemistry , physics , optics , nanotechnology , geometry , mathematics
Based on the tight binding scattering theoretical method ,the electronic structure of As adsorption on the surface of InP(110) is studied.The bulk material is described by a realistic empirical tight binding Hamiltonians ,the translationally invariant As/InP(110)(1×1) system is discussed in terms of the ordered As monolayer and an exchange reaction between surface P and As adatoms. Surface states and surface resonances are identified from the calculated local density of states along the four zone boundaries of the (110) surface Brillouin zone .In this calculation ,some ETB parameters are adjusted at the surface, the results are in good agreement with the experiment and are better than other theoretical results.