Open AccessSTUDIES OF CNx FILMS DEPOSITED BY MEANS OF MICROWAVE PLASMA CVD METHOD
Author(s) -
Yu Xin,
S.P. Fan,
Di Guo-Qing,
Mingrong Shen,
Zhaoqiang Gan
Publication year - 1998
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.47.154
Subject(s) - materials science , raman spectroscopy , x ray photoelectron spectroscopy , chemical vapor deposition , analytical chemistry (journal) , scanning electron microscope , microwave , diffraction , amorphous solid , graphite , chemical bond , crystallography , nanotechnology , optics , nuclear magnetic resonance , chemistry , composite material , physics , chromatography , organic chemistry , quantum mechanics
CNx films deposited on Si substrates with microwave plasma chemical vapor deposition method are measured and analyzed using Raman scattering,X-ray photoelectron spectrum,X-ray diffraction and scanning electron microscopy techniques.The result of Raman spectrum shows the amorphous graphite peak around 1600cm-1 with the flow ratio of CH4 and N2 below 1∶8.As the flow ratio is equal to 1∶8,a characteristic peak around 2190cm-1 exists,which represents C≡N bond.According to the XPS results,the binding pattern of C and N are seen to be of C—N bond and C≡N bond.There is no diffraction peaks corresponding to β-C3N4 phase in the XRD pattern.The gas pressure has influence on the deposited rate of the film.