STUDIES ON TEMPERATURE DEPENDENCE OF PHOTOLUMINESCENCE IN POROUS SILICON | Zendy

Xiaobing Liu | Zendy; Xiong Zu-Hong | Zendy; YUAN SHUAI | Zendy; CHEN YAN-DONG | Zendy; He Jun | Zendy; LIAO LIANG-SHENG | Zendy; DING XUN-MIN | Zendy; HOU XIAO-YUAN | Zendy

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STUDIES ON TEMPERATURE DEPENDENCE OF PHOTOLUMINESCENCE IN POROUS SILICON

Author(s) -

Xiaobing Liu,

Xiong Zu-Hong,

YUAN SHUAI,

CHEN YAN-DONG,

He Jun,

LIAO LIANG-SHENG,

DING XUN-MIN,

HOU XIAO-YUAN

Publication year - 1998

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.47.1391

Subject(s) - photoluminescence , porous silicon , materials science , porosity , luminescence , blueshift , silicon , wavelength , porous medium , red shift , analytical chemistry (journal) , optoelectronics , composite material , chemistry , physics , chromatography , quantum mechanics , galaxy

The temperature dependence of photoluminescence (PL) in porous silicon has been investigated. It is found that the PL peak from the low porosity samples shows a red shift with decreasing temperature, but the blue shift of the PL peak is always observed in the high porosity samples. The temperature dependence of the PL peak shift observed experimentally can be qualitatively explained by the simulated curves of the luminescent efficiency versus wavelength.

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