STUDY ON THE ELECTRON MOBILITY FOR EACH SUBBAND ON THE n-HgCdTe ACCUMULATED LAYER | Zendy

GUI YONG-SHENG | Zendy; CHU JUN-HAO | Zendy; CAI YI | Zendy; HENG GUO-ZHEN | Zendy; Tang Dingyuan | Zendy

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STUDY ON THE ELECTRON MOBILITY FOR EACH SUBBAND ON THE n-HgCdTe ACCUMULATED LAYER

Author(s) -

GUI YONG-SHENG,

CHU JUN-HAO,

CAI YI,

HENG GUO-ZHEN,

Tang Dingyuan

Publication year - 1998

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.47.1354

Subject(s) - electron mobility , condensed matter physics , materials science , hall effect , electron , magnetic field , layer (electronics) , electrical resistivity and conductivity , electron density , shubnikov–de haas effect , charge carrier density , physics , fermi gas , nanotechnology , quantum oscillations , quantum mechanics , doping

By using quantitative mobility spectrum analysis technique, the temperature-dependent density and mobility for each subband of the accumulated layer on the n-HgCdTe devices have been determined from magnetic-field-dependent Hall and resistivity data.The results agree well with the Shubnikov-de Hass measurements and theoretical calculations.

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