Open AccessSTUDY ON THE ELECTRON MOBILITY FOR EACH SUBBAND ON THE n-HgCdTe ACCUMULATED LAYER
Author(s) -
Gui Yong-Sheng,
Chu Jun-Hao,
Yong Cai,
Heng Guo-Zhen,
Dewei Tang
Publication year - 1998
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.47.1354
Subject(s) - electron mobility , condensed matter physics , materials science , hall effect , electron , magnetic field , layer (electronics) , electrical resistivity and conductivity , electron density , shubnikov–de haas effect , charge carrier density , physics , fermi gas , nanotechnology , quantum oscillations , quantum mechanics , doping
By using quantitative mobility spectrum analysis technique, the temperature-dependent density and mobility for each subband of the accumulated layer on the n-HgCdTe devices have been determined from magnetic-field-dependent Hall and resistivity data.The results agree well with the Shubnikov-de Hass measurements and theoretical calculations.