Open AccessCONDUCTION-BAND OFFSET IN PSEUDOMORPHIC GaAs/In0.2Ga0.8As QUANTUM WELL DETERMINED BY C-V PROFILING AND DLTS TECHNIQUES
Author(s) -
Linfeng Lu,
Yanhua Zhang,
Gaowen Yang,
Zhanguo Wang,
J.WANG,
Y.WANG,
Weikun Ge
Publication year - 1998
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.47.1339
Subject(s) - deep level transient spectroscopy , molecular beam epitaxy , conduction band , materials science , thermal conduction , epitaxy , band offset , quantum well , capacitance , optoelectronics , condensed matter physics , analytical chemistry (journal) , band gap , chemistry , physics , silicon , valence band , electron , optics , nanotechnology , electrode , layer (electronics) , quantum mechanics , chromatography , composite material , laser
The conduction-band offset ΔEc has been determined for molecular beam epitaxy (MBE) grown GaAs/In0.2Ga0.8As single quantum well structure,by measuring the capacitance-voltage profiling, while taking into account a correction for the interface charge density, and the capacitance transient resulting from thermal emission of carrier from the quantum well, respectively.We found that ΔEc=0.227eV,corresponding to about 89% ΔEg,from the C-V profiling; and ΔEc=0.229eV, corresponding to about 89.9% ΔEg, from the deep level transient spectroscopy (DLTS) technique. The results suggest that the conduction-band discontinuity ΔEc obtained from the C-V profiling is in good agreement with that obtained from the DLTS technique.