Open AccessPREPARATION OF CUBIC C3N4 THIN FILMS BY LOW-PRESSURE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION
Author(s) -
Zhihong Zhang,
Hailing Guo,
Yu Fei-Wei,
Xiong Qi-Hua,
Ye Ming-sheng,
Xuejun Fan
Publication year - 1998
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.47.1047
Subject(s) - x ray photoelectron spectroscopy , materials science , chemical vapor deposition , thin film , wafer , silicon nitride , transmission electron microscopy , silicon , analytical chemistry (journal) , plasma enhanced chemical vapor deposition , boron nitride , crystalline silicon , chemical engineering , nanotechnology , optoelectronics , chemistry , engineering , chromatography
Cubic C3N4 was synthesized on glass and silicon wafers by using low-pressure plasma enhanced chemical vapor deposition and silicon nitride interlayer technology.The crystalline structure was investigated by transmission electron microscopy (TEM),and this material has body centered cubic symmetrical structure.The lattice parameter a=0.536 nm determined by TEM is comparable to theoretical data 0.53973nm.The C1s and N1s binding energies are 285.01 and 398.60eV respectively,and the nitrogen content of the film is up to 42.96%,determined by X-ray photoelectron spectroscopy (XPS).The thin films on glass are transparent to light in the visible and near infrared region,and at 400 nm there appears strong light absorption.