Open AccessNITRIDATION OF K/GaAs(100) SURFACES
Author(s) -
Hu Hai-Tian,
Linhan Bing,
Yuan Ze-Liang,
Ding Xun-Min,
X. Y. Hou
Publication year - 1998
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.47.1041
Subject(s) - spectral line , materials science , valence band , valence (chemistry) , work function , nitrogen , semiconductor , atomic physics , optoelectronics , band gap , nanotechnology , chemistry , physics , organic chemistry , layer (electronics) , astronomy
Presence of a K adlayer will promote nitridation of GaAs(100) surfaces at room temperature, as is evidenced by photoemission measurements. Following exposure of K/GaAs to pure nitrogen, there appear remarkable variations in both valence band and core level spectra, i.e., recovery of work function to a certain extent, emergence of the N2p peak in the valence band spectra and creation of chemically shifted Ga2p and As2p components in the core level spectra. For the three different K coverages we studied (1/4, 1/2 and 1ML), the 1ML one shows the strongest promotion effect.