Open AccessANNEALING BEHAVIORS OF PHOTOLUMINESCENCE FROM SiOx∶H FILMS
Author(s) -
Ma Zhi-Xun,
Xin Liao,
Zihe Li,
CHENG WEN-CHAO,
Yue Guozhen,
Yongqian Wang,
Diao Hong-Wei,
Guanglin Kong
Publication year - 1998
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.47.1033
Subject(s) - photoluminescence , materials science , annealing (glass) , nanocrystalline material , raman spectroscopy , silicon , nanocrystalline silicon , spectral line , infrared , redshift , optoelectronics , analytical chemistry (journal) , nanotechnology , optics , crystalline silicon , composite material , chemistry , physics , chromatography , astronomy , amorphous silicon , quantum mechanics , galaxy
The nanocrystalline silicon embedded in silicon dioxide has been successfully prepared by post heat treatment for SiOx∶H.We have found that each strong photoluminescence spectrum from a-SiOx∶H consists of two Gaussian components.One is a main broad peak which redshifts with the increase of annealing temperature and the other is a shoulder remaining at about 835 nm.In conjunction with infrared and micro-Raman spectra,the possible origins of the two bands are discussed.The peaks around 850 nm after annealing at 1170℃ are associated with the precipitation of nanocrystalline silicon,and this supports the quantum confinement effect.