Open AccessMEASUREMENT OF RESONANT DEFECT STATES IN NARROW GAP SEMICONDUCTORS
Author(s) -
Wu Liang-Jin,
Kun Liu,
Chu Jun-Hao
Publication year - 1997
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.46.964
Subject(s) - semiconductor , conduction band , materials science , band gap , condensed matter physics , valence band , semiconductor materials , capacitance , spectroscopy , valence (chemistry) , optoelectronics , atomic physics , physics , electron , electrode , quantum mechanics
By using a newly developed measuring technique,i.e. the quantum capacitance spectroscopy,resonant defect states were observed in the valence band and the conduction band of narrow gap semiconductor InSb and HgCdTe materials. On the basis of a developed experimental model,the properties of the resonant defect states are investigated.