Open AccessTHE EFFECTS OF INTERVALLEY INTERACTIONS ON THE ELECTRONIC STRUCTURES IN QUANTUM WELLS Ge0.3Si0.7/Si/Ge0.3Si0.7 GROWN ON Ge0.3Si0.7(001)
Author(s) -
Xu Zhi Zhong
Publication year - 1997
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.46.775
Subject(s) - pseudopotential , physics , condensed matter physics , quantum well , electronic structure , engineering physics , quantum mechanics , laser
Using the generalized k·p method based on empirical pseudopotential theory associated with boundary conditions of current density operator,the electronic bound levels are calculated for quantum wells Ge0.3Si0.7/Si/Ge0.3Si0.7 grown on Ge0.3Si0.7(001).The energy level splitting by intervalley interactions is studied in detail and the dispersions of electronic bound levels in the well plane are also discussed.