z-logo
open-access-imgOpen Access
THE EFFECTS OF INTERVALLEY INTERACTIONS ON THE ELECTRONIC STRUCTURES IN QUANTUM WELLS Ge0.3Si0.7/Si/Ge0.3Si0.7 GROWN ON Ge0.3Si0.7(001)
Author(s) -
Xu Zhi Zhong
Publication year - 1997
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.46.775
Subject(s) - pseudopotential , physics , condensed matter physics , quantum well , electronic structure , engineering physics , quantum mechanics , laser
Using the generalized k·p method based on empirical pseudopotential theory associated with boundary conditions of current density operator,the electronic bound levels are calculated for quantum wells Ge0.3Si0.7/Si/Ge0.3Si0.7 grown on Ge0.3Si0.7(001).The energy level splitting by intervalley interactions is studied in detail and the dispersions of electronic bound levels in the well plane are also discussed.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here