Open AccessVALENCE BAND OFFSETS OF Ge/ZnSe(100) STUDIED BY SYNCHROTRON RADIATION PHOTOEMISSION
Author(s) -
Ban Da-yan,
Fang Rong-Chuan,
Yang Fengyuan,
Sheng Xu,
Ping Xu,
Yuan Shixin
Publication year - 1997
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.46.587
Subject(s) - overlayer , synchrotron radiation , heterojunction , materials science , photoemission spectroscopy , polar , valence band , spectral line , atomic physics , valence (chemistry) , band offset , molecular physics , x ray photoelectron spectroscopy , condensed matter physics , optoelectronics , optics , physics , band gap , nuclear magnetic resonance , quantum mechanics , astronomy
The band lineup of a Ge/ZnSe(100) polar interface has been studied by synchrotron radiation photoemission spectroscopy.Surface sensitive core level spectra indicate that Ge atoms in the overlayer can react with Se atoms at the interface.The valence band offset of this heterojunction has been obtained using core level techniques,and found to be 1.76±0.1eV.The effect of polar surface ZnSe(100) on the valence band offset has been discussed in light of the interface bond polarity model.The experimental results agree well with the theory.