PHOTOTHERMAL IONIZATION SPECTROSCOPY FOR SHALLOW DONOR IN Si1-xGex EPITAXIAL LAYER | Zendy

Xiaohong Shi | Zendy; Pulin Liu | Zendy; Gong Dawei | Zendy; Zhanghai Chen | Zendy; SHI GUO-LIANG | Zendy; Xuechu Shen | Zendy

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PHOTOTHERMAL IONIZATION SPECTROSCOPY FOR SHALLOW DONOR IN Si1-xGex EPITAXIAL LAYER

Author(s) -

Xiaohong Shi,

Pulin Liu,

Gong Dawei,

Zhanghai Chen,

SHI GUO-LIANG,

Xuechu Shen

Publication year - 1997

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.46.370

Subject(s) - materials science , ionization , photothermal therapy , epitaxy , spectroscopy , photothermal spectroscopy , excited state , ionization energy , layer (electronics) , impact ionization , spectral line , atomic physics , physics , nanotechnology , ion , quantum mechanics , astronomy

The 2p± and 3p± excited lines of P donors in Si0.92Ge0.08 epitaxial layer have been observed using photothermal ionization spectroscopy.The ionization energy of P in Si0.92Ge0.08 is 45.51meV according to effective mass approach.The spectral lines of P in Si1-xGex compared with those in pure Si apparently broaden due to alloy disorder effect.

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