Open AccessPHOTOTHERMAL IONIZATION SPECTROSCOPY FOR SHALLOW DONOR IN Si1-xGex EPITAXIAL LAYER
Author(s) -
Shi Xiao-Hong,
Pulin Liu,
Dunwei Gong,
Zhanghai Chen,
Guoliang Shi,
Xuechu Shen
Publication year - 1997
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.46.370
Subject(s) - materials science , ionization , photothermal therapy , epitaxy , spectroscopy , photothermal spectroscopy , excited state , ionization energy , layer (electronics) , impact ionization , spectral line , atomic physics , physics , nanotechnology , ion , quantum mechanics , astronomy
The 2p± and 3p± excited lines of P donors in Si0.92Ge0.08 epitaxial layer have been observed using photothermal ionization spectroscopy.The ionization energy of P in Si0.92Ge0.08 is 45.51meV according to effective mass approach.The spectral lines of P in Si1-xGex compared with those in pure Si apparently broaden due to alloy disorder effect.