Open AccessMONTE CARLO MODEL FOR ELECTRON TRANSPORT IN THE MATERIAL 3C-SiC
Author(s) -
Yuming Zhang,
Yimen Zhang,
Jie Cui,
Luo Jin-Sheng
Publication year - 1997
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.46.2215
Subject(s) - monte carlo method , scattering , electron , field (mathematics) , materials science , statistical physics , computational physics , condensed matter physics , physics , optics , nuclear physics , statistics , mathematics , pure mathematics
Static electron transport in the material 3C-SiC is analyzed by using single particle Monte Carlo method at high field and high temperature. The physical model used in the simulation is developed by considering the energy gap structures and the main scattering mechanisms in details. The results show the excellent high field and high temperature properties of the material. The scattering mechanisms at high temperature and high field are discussed by analysing the results.