MONTE CARLO MODEL FOR ELECTRON TRANSPORT IN THE MATERIAL 3C-SiC | Zendy

Yuming Zhang | Zendy; Yimen Zhang | Zendy; Jie Cui | Zendy; Jinsheng Luo | Zendy

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MONTE CARLO MODEL FOR ELECTRON TRANSPORT IN THE MATERIAL 3C-SiC

Author(s) -

Yuming Zhang,

Yimen Zhang,

Jie Cui,

Jinsheng Luo

Publication year - 1997

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.46.2215

Subject(s) - monte carlo method , scattering , electron , field (mathematics) , materials science , statistical physics , computational physics , condensed matter physics , physics , optics , nuclear physics , statistics , mathematics , pure mathematics

Static electron transport in the material 3C-SiC is analyzed by using single particle Monte Carlo method at high field and high temperature. The physical model used in the simulation is developed by considering the energy gap structures and the main scattering mechanisms in details. The results show the excellent high field and high temperature properties of the material. The scattering mechanisms at high temperature and high field are discussed by analysing the results.

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