Open AccessA NEW METHOD FOR POST TREATMENT OF POROUS SILICON:SULFUR PASSIVATION BY MICROWAVE PLASMA ASSISTANCE
Author(s) -
Xiaobing Liu,
Zuhong Xiong,
Shuai Yuan,
Liao Liang-Sheng,
Jiaqing He,
Cao Xian-An,
Miao Xi-Yue,
Ding Xun-Min,
X. Y. Hou
Publication year - 1997
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.46.2059
Subject(s) - passivation , materials science , photoluminescence , porous silicon , blueshift , microwave , sulfur , silicon , fourier transform infrared spectroscopy , analytical chemistry (journal) , intensity (physics) , plasma , optoelectronics , optics , nanotechnology , chemistry , metallurgy , physics , layer (electronics) , quantum mechanics , chromatography
A new method for post-treatment of PS(porous silicon), sulfur passivation by microwave plasma assistance in vacuum,is reported in this paper.Fourier transform infrared spectrum indicated that the treated sample surface is mainly covered by SiSx and SiOy.Compared with the as etched PS,the photoluminescence (PL) intensity of the sample is 3.5 times stronger,and the 4nm blueshift of the PL peak was observed experimentally;furthermore,the intensity decay of the PL peak hasnot been observed after 60d in the atmosphere.Therefore,sulfur passivation is an effective post treatment for enhancing PL intensity and stabilization of PS.