Open AccessINVESTIGATION OF GROWTH MECHANISM OF NANOCRYSTALLINE SILICON THIN FILMS PREPARED BY HOT-FILAMENT CHEMICAL VAPOR DEPOSITION
Author(s) -
Chen Guo,
Xiaoxu Guo,
ZHU MEI-FANG,
Sun Jing-Lan,
XU HUAI-ZHE,
HAN YI-QIN
Publication year - 1997
Publication title -
acta physica sinica
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.46.2015
Subject(s) - materials science , thin film , chemical vapor deposition , substrate (aquarium) , silicon , deposition (geology) , nanocrystalline material , protein filament , raman scattering , combustion chemical vapor deposition , chemical engineering , carbon film , analytical chemistry (journal) , nanocrystalline silicon , raman spectroscopy , composite material , nanotechnology , optics , crystalline silicon , chemistry , optoelectronics , organic chemistry , oceanography , biology , paleontology , physics , sediment , geology , engineering , amorphous silicon
The nc Si∶H thin films were prepared by hotfilament vapor deposition.The effect of gas pressure,-high H2 dilution and substrate-to-filament distance on deposition rate,the formation and structure of nc-Si∶H films was systematically studied.The structure of nc-Si∶H was determined using Raman scattering and X-ray diffraction.The temperature distribution was calculated;the travel of radicals evaporated from the filament and the gas-phase reaction were discussed in detail.The results were in agreement with the measurement.
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