VALENCE BAND OFFSETS OF Si/ZnS POLAR INTERFACES: A SYNCHROTRON RADIATION PHOTOEMISSION STUDY | Zendy

BAN DA-YAN | Zendy; Rongchuan Fang | Zendy; Jiangeng Xue | Zendy; Erdong Lu | Zendy; XU SHI-HONG | Zendy; Pengshou Xu | Zendy

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VALENCE BAND OFFSETS OF Si/ZnS POLAR INTERFACES: A SYNCHROTRON RADIATION PHOTOEMISSION STUDY

Author(s) -

BAN DA-YAN,

Rongchuan Fang,

Jiangeng Xue,

Erdong Lu,

XU SHI-HONG,

Pengshou Xu

Publication year - 1997

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.46.1817

Subject(s) - materials science , synchrotron radiation , heterojunction , x ray photoelectron spectroscopy , classification of discontinuities , photoemission spectroscopy , band offset , valence (chemistry) , semimetal , valence band , polar , synchrotron , band diagram , electronic band structure , atomic physics , silicon , condensed matter physics , band gap , optoelectronics , nuclear magnetic resonance , physics , optics , mathematical analysis , mathematics , quantum mechanics , astronomy

Synchrotron radiation photoelectron spectroscopy is used to measure the valence-band offsets for Si/ZnS(111) and (100) heterojunctions. The valence band discontinuities obtained from the measurements are both (1.9±0.1)eV for Si/ZnS(111) and Si/ZnS(100) interfaces,which is in excellent agreement with the theoretical predictions but considerably different from the experimental- result of ZnS/Si(111) reported by Maierhofer et al. This suggests that the commutativity rule of- band offset may not be valid for Si/ZnS polar interface and the reason is discussed.

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