Open AccessVALENCE BAND OFFSETS OF Si/ZnS POLAR INTERFACES: A SYNCHROTRON RADIATION PHOTOEMISSION STUDY
Author(s) -
Ban Da-yan,
Fang Rong-Chuan,
Jiangeng Xue,
Lu E,
Sheng Xu,
Ping Xu
Publication year - 1997
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.46.1817
Subject(s) - materials science , synchrotron radiation , heterojunction , x ray photoelectron spectroscopy , classification of discontinuities , photoemission spectroscopy , band offset , valence (chemistry) , semimetal , valence band , polar , synchrotron , band diagram , electronic band structure , atomic physics , silicon , condensed matter physics , band gap , optoelectronics , nuclear magnetic resonance , physics , optics , mathematical analysis , mathematics , quantum mechanics , astronomy
Synchrotron radiation photoelectron spectroscopy is used to measure the valence-band offsets for Si/ZnS(111) and (100) heterojunctions. The valence band discontinuities obtained from the measurements are both (1.9±0.1)eV for Si/ZnS(111) and Si/ZnS(100) interfaces,which is in excellent agreement with the theoretical predictions but considerably different from the experimental- result of ZnS/Si(111) reported by Maierhofer et al. This suggests that the commutativity rule of- band offset may not be valid for Si/ZnS polar interface and the reason is discussed.