Open AccessDIFFERENCES BETWEEN THE INTERFACES OF InGaAs/GaAs AND GaAs/InGaAs IN SUPERLATTICES
Author(s) -
王晓军,
金星,
张子平,
郑联喜,
肖智博,
胡雄伟,
王启明
Publication year - 1997
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.46.1808
Subject(s) - superlattice , materials science , indium , interface (matter) , condensed matter physics , layer (electronics) , alloy , relaxation (psychology) , indium arsenide , strain (injury) , optoelectronics , gallium arsenide , nanotechnology , composite material , physics , psychology , medicine , social psychology , capillary number , capillary action
The InyGa1-y As/GaAs superlattice with an InxGa1-x As (xyGA1-yAs interface was narrower than that at the InyGa1-y As/GaAs interface; in InyGa1-yAs alloy layer, the composition near the GaAs/InyGa1-y As interface was larger than that near the other interface. For the first time, we have explained the composition profile in these kinds of superlattices based on the indium segregation theory. In addition, a new strain relaxation model was presented to explain the differences in the smoothness between the two interfaces.