SURFACTANT EFFECT ON THE STRUCTURE OF THIN Ge HETEROEPILAYERS STUDIED BY X-RAY DIFFRACTION | Zendy

Haijun Zhu | Zendy; Jiang Zui-Min | Zendy; Wenli Zheng | Zendy; Jiang Xiaoming | Zendy; XU A-MEI | Zendy; MAO MING-CHUN | Zendy; HUDONG ZHI | Zendy; Xiangjiu Zhang | Zendy; Xun Wang | Zendy

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SURFACTANT EFFECT ON THE STRUCTURE OF THIN Ge HETEROEPILAYERS STUDIED BY X-RAY DIFFRACTION

Author(s) -

Haijun Zhu,

Jiang Zui-Min,

Wenli Zheng,

Jiang Xiaoming,

XU A-MEI,

MAO MING-CHUN,

HUDONG ZHI,

Xiangjiu Zhang,

Xun Wang

Publication year - 1997

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.46.1796

Subject(s) - materials science , diffraction , reflection high energy electron diffraction , strain (injury) , crystallography , germanium , x ray crystallography , in situ , thin film , electron diffraction , optics , silicon , optoelectronics , nanotechnology , chemistry , physics , medicine , organic chemistry

The effect of Sb on Ge epilayer grown on Si(001) is investigated in situ by RHEED and ex situ by X-ray diffraction.Without Sb,island formation takes place when Ge epilayer is 6nm thick,and the strain in Ge epilyer is totally relaxed.With Sb,the growth mode of Ge on Si is two- dimensional, and the strain is relaxed gradually.Even if the thickness of the Ge epilayer is 6nm, 42%- strain is still not relaxed.

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