Open AccessSURFACTANT EFFECT ON THE STRUCTURE OF THIN Ge HETEROEPILAYERS STUDIED BY X-RAY DIFFRACTION
Author(s) -
Haoxiang Zhu,
Zuimin Jiang,
Wen-Chen Zheng,
Jiang Xiao-ming,
Aiguo Xu,
Mao Ming-Chun,
Hudong Zhi,
Xiangjiu Zhang,
Xun Wang
Publication year - 1997
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.46.1796
Subject(s) - materials science , diffraction , reflection high energy electron diffraction , strain (injury) , crystallography , germanium , x ray crystallography , in situ , thin film , electron diffraction , optics , silicon , optoelectronics , nanotechnology , chemistry , physics , medicine , organic chemistry
The effect of Sb on Ge epilayer grown on Si(001) is investigated in situ by RHEED and ex situ by X-ray diffraction.Without Sb,island formation takes place when Ge epilayer is 6nm thick,and the strain in Ge epilyer is totally relaxed.With Sb,the growth mode of Ge on Si is two- dimensional, and the strain is relaxed gradually.Even if the thickness of the Ge epilayer is 6nm, 42%- strain is still not relaxed.