Open AccessGREEN/BLUE LIGHT EMISSION AND LUMINESCENT-MECHANISM OF NANOCRYSTALLINE SILICON-EMBEDDED IN SILICON OXIDE THIN FILM
Author(s) -
Min Zhu,
Chen Guo,
Hao Xu,
Han Yi-Qin,
Kun Xie,
Zhen-xiang Liu,
Tang Yong,
Peiyi Chen
Publication year - 1997
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.46.1645
Subject(s) - materials science , photoluminescence , silicon , nanocrystalline silicon , annealing (glass) , silicon oxide , luminescence , nanocrystalline material , light emission , oxide , optoelectronics , green light , thin film , analytical chemistry (journal) , crystalline silicon , nanotechnology , blue light , composite material , chemistry , amorphous silicon , metallurgy , silicon nitride , chromatography
Green/blue light emission with peak position around 2.3—2.4eV at room temperature was observed from Si nanocrystals embedded in silicon oxide films. The effects of thermal annealing on the structure, silicon core level and photoluminescence of silicon oxide films with nanostructures were studied. PL spectra consisted of peaks of 1.86 and 2.38eV, which were independent of annealing temperature Ta. Silicon and SiO2 phases were separated in the annealing temperature range. Both PL intensity and the amount of Si4+ increased repidly as Ta>750℃. From our observation, the origin of green/blue light emission is suggested to be related to the defects at the interface and in the SiOx network.