Open AccessINTERFACIAL REACTION OF Ti AND MULLITE-CERAMIC SUBSTRATE
Author(s) -
YUE RUI-FENG,
Youxiang Wang,
Chunhua Chen,
XU Chuan-xiang
Publication year - 1997
Publication title -
acta physica sinica
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.46.1605
Subject(s) - mullite , materials science , auger electron spectroscopy , ceramic , annealing (glass) , substrate (aquarium) , analytical chemistry (journal) , chemical engineering , composite material , chemistry , oceanography , engineering , geology , physics , chromatography , nuclear physics
A 200nm Ti film was deposited on a polished mullite ceramic substrate at 200℃ by electron beam evaporation,and annealed under high vacuum conditions.Secondary ion mass spectrometry (SIMS),Auger electron spectroscopy (AES) and X-ray diffraction measurement (XRD) were employed to probe the solid interfacial reaction between Ti and mullite from 200—650℃ for the first time.The results show that the first deposited Ti atoms have formed Ti—O bond with O on mullite surface during the deposition,and trace elemental Al and Si atoms have been segregated,but interfacial range is very narrow.It was broadened a little after the sample annealed at 450℃ for an hour.Interfacial reaction happened violently when the annealing temperature was 650℃ for an hour,and the sample mainly consisted of four laminated structures which in turn were TiO+Ti,Ti3Al,Ti3Al+TiSi2 and mullite ceramic substrate.
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