Open AccessSIMS ANALYSIS OF MIGRATION CHARACTERISTICS OF FLUORINE IN BF2+ IMPLANTED POLY-Si GATE UNDER CONVENTIONAL THERMAL ANNEALING
Author(s) -
Jialu Liu,
Zhang Ting-Qing,
Jianjun Liu,
Yuanfu Zhao
Publication year - 1997
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.46.1580
Subject(s) - fluorine , materials science , annealing (glass) , ion implantation , secondary ion mass spectrometry , thermal , analytical chemistry (journal) , optoelectronics , ion , composite material , metallurgy , chemistry , thermodynamics , physics , organic chemistry , chromatography
Distribution and migration characteristics of fluorine in poly-Si gate on BF2+ implanted poly-Si gate with an energy of 80 keV and doses of 2×1015 cm-2 under conventional thermal annealing has been analyzed systematically and deeply by SIMS.Migration of fluorine in poly-Si gate exists not only diffusion mechanism,but also absorption and emission mechanism,and experiment results are explained successfully.