SIMS ANALYSIS OF MIGRATION CHARACTERISTICS OF FLUORINE IN BF2+ IMPLANTED POLY-Si GATE UNDER CONVENTIONAL THERMAL ANNEALING | Zendy

Jialu Liu | Zendy; ZHANG TING-QING | Zendy; Jianjun Li | Zendy; Zhao Yuanfu | Zendy

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SIMS ANALYSIS OF MIGRATION CHARACTERISTICS OF FLUORINE IN BF2+ IMPLANTED POLY-Si GATE UNDER CONVENTIONAL THERMAL ANNEALING

Author(s) -

Jialu Liu,

ZHANG TING-QING,

Jianjun Li,

Zhao Yuanfu

Publication year - 1997

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.46.1580

Subject(s) - fluorine , materials science , annealing (glass) , ion implantation , secondary ion mass spectrometry , thermal , analytical chemistry (journal) , optoelectronics , ion , composite material , metallurgy , chemistry , thermodynamics , physics , organic chemistry , chromatography

Distribution and migration characteristics of fluorine in poly-Si gate on BF2+ implanted poly-Si gate with an energy of 80 keV and doses of 2×1015 cm-2 under conventional thermal annealing has been analyzed systematically and deeply by SIMS.Migration of fluorine in poly-Si gate exists not only diffusion mechanism,but also absorption and emission mechanism,and experiment results are explained successfully.

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