VISIBLE ELECTROLUMINESCENCE FROM SILICONNANOCRYSTALLITES PREPARED BY PLASMAENHANCED CHEMICAL VAPOR DEPOSITION | Zendy

Tong Song | Zendy; Liu Xiangna | Zendy; WANG LU-CHUN | Zendy; Yan Feng | Zendy; XiMao Bao | Zendy

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VISIBLE ELECTROLUMINESCENCE FROM SILICONNANOCRYSTALLITES PREPARED BY PLASMAENHANCED CHEMICAL VAPOR DEPOSITION

Author(s) -

Tong Song,

Liu Xiangna,

WANG LU-CHUN,

Yan Feng,

XiMao Bao

Publication year - 1997

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.46.1217

Subject(s) - electroluminescence , chemical vapor deposition , materials science , plasma enhanced chemical vapor deposition , spectral line , silicon , conductivity , optoelectronics , thermal conduction , deposition (geology) , analytical chemistry (journal) , nanotechnology , chemistry , composite material , physics , chromatography , paleontology , layer (electronics) , astronomy , sediment , biology

We have observed visible electroluminescence (EL) from silicon nanocrystallites which are embedded in a-Si∶H films prepared in a plasma enhanced chemical vapor deposition system. The EL spectra are in the range of 500nm to 850nm with two peaks located at about 630—680nm and 730nm respectively. We found that the intensity of EL peaks is related closely to the conductivity of the deposited films. The carrier conduction path is discussed in terms of the material structural- characteristics, and a tentative explanation of the light emission mechanism is proposed.

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