Open AccessSURFACE RELAXATION AND ITS INFLUENCE ON THE-FERMI LEVEL PINNING OF Zn/GaAs(110)
Author(s) -
Enge Wang
Publication year - 1997
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.46.117
Subject(s) - condensed matter physics , materials science , dangling bond , covalent bond , fermi level , atomic orbital , relaxation (psychology) , adsorption , valence (chemistry) , electronic structure , surface states , surface (topology) , silicon , physics , chemistry , electron , quantum mechanics , psychology , social psychology , geometry , mathematics , metallurgy
Under the tight-binding approximation, the geometric structure of the Zn/GaAs(110) surface is calculated by a self-consistent total energy method. It is found that the surface relaxation structure is a universal characteristic for low coverage adsorption, which is important in determining the Fermi level. The bonding states are pinned at 0.73eV above the top of the valence band by the covalent hybridization of the highly localized Zn s orbitals and the surface Ga sp dangling bonds. A comparison is made with theoretical and experimental results of free and other adsorbate GaAs(110) surfaces.