Open AccessSRPES AND PL FURTHER STUDIES OF CHEMICAL-PASSIVATED GaAs SURFACE BY-CH3CSNH2 TREATMENT
Author(s) -
Lu E,
Fapei Zhang,
Xiaojiang Yu,
Sheng Xu,
Xu Fa-Qiang,
Pan Hai-Bin,
ZhengFu Han,
Ping Xu,
Xinyi Zhang
Publication year - 1997
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.46.1022
Subject(s) - passivation , materials science , sulfur , analytical chemistry (journal) , optoelectronics , nanotechnology , chemistry , metallurgy , layer (electronics) , chromatography
In this paper, CH3CSNH2 passivated GaAs(100) surfaces in different conditions such as in alkali and acid solution were investigated by SRPES and PL. SRPES reveals that sulfur bonds both Ga and As on GaAs surfaces. Improvements of PL intensities reveal the reduction of surface combination velocity, resulting in the reduction of surface defect states due to the formation of sulfur passivation films.