SRPES AND PL FURTHER STUDIES OF CHEMICAL-PASSIVATED GaAs SURFACE BY-CH3CSNH2 TREATMENT | Zendy

Erdong Lu | Zendy; Fapei Zhang | Zendy; Xiaojiang Yu | Zendy; XU SHI-HONG | Zendy; Faqiang Xu | Zendy; Pan Hai-bin | Zendy; ZhengFu Han | Zendy; Pengshou Xu | Zendy; Xinyi Zhang | Zendy

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SRPES AND PL FURTHER STUDIES OF CHEMICAL-PASSIVATED GaAs SURFACE BY-CH3CSNH2 TREATMENT

Author(s) -

Erdong Lu,

Fapei Zhang,

Xiaojiang Yu,

XU SHI-HONG,

Faqiang Xu,

Pan Hai-bin,

ZhengFu Han,

Pengshou Xu,

Xinyi Zhang

Publication year - 1997

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.46.1022

Subject(s) - passivation , materials science , sulfur , analytical chemistry (journal) , optoelectronics , nanotechnology , chemistry , metallurgy , layer (electronics) , chromatography

In this paper, CH3CSNH2 passivated GaAs(100) surfaces in different conditions such as in alkali and acid solution were investigated by SRPES and PL. SRPES reveals that sulfur bonds both Ga and As on GaAs surfaces. Improvements of PL intensities reveal the reduction of surface combination velocity, resulting in the reduction of surface defect states due to the formation of sulfur passivation films.

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