Open AccessOPTICAL SPECTRA OF DI-CARBON CENTER AFTER ANNEALING IN SILICON MONOCRYSTAL
Author(s) -
Guo Da-Qin,
Wenjie Qi
Publication year - 1996
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.45.995
Subject(s) - silicon , annealing (glass) , materials science , crystallographic defect , spectral line , carbon fibers , crystallography , analytical chemistry (journal) , optoelectronics , chemistry , physics , metallurgy , composite material , chromatography , astronomy , composite number
We've investigated the annealing behaviour of the di-carbon centre (zero-phonon line at 969 meV or 7818 cm-1)in float zone and Czochralski silicon crystals. The break-up process is not the only way to destroy the di-carbon centres and it is shown that the presence of other defects may affect the annealing process. After the thermal destruction of the di-carbon centre, we've discovered many previously unreported carbon and oxygen related point defects. Their photolumiescence lines are observed. We suggest that the interstitial silicon atom is the defect trapped near but not ‘at' the di-carbon centre forming the satellite sublines at 951.16(7671), 952.98(7686), and 956.91meV (7717cm-1).