Open AccessA NEW METHOD:CH3CSNH2/NH4OH PASSIVATED GaAs (100) SURFACE BY SRPES INVESTIGATION
Author(s) -
Lu E,
Ping Xu,
Xiaojiang Yu,
Sheng Xu,
Pan Hai-Bin,
Xinyi Zhang
Publication year - 1996
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.45.715
Subject(s) - x ray photoelectron spectroscopy , materials science , synchrotron radiation , photoemission spectroscopy , annealing (glass) , band bending , analytical chemistry (journal) , spectroscopy , passivation , surface states , surface (topology) , optoelectronics , chemistry , nanotechnology , optics , physics , nuclear magnetic resonance , layer (electronics) , composite material , geometry , mathematics , quantum mechanics , chromatography
We have developed a new method to treat GaAs (100) surface by CH3CSNH2/NH4OH solution Synchrotron Radiation Photoemission Spectroscopy (SRPES) and X-ray Photoemission Spectroscopy (XPS) have been used to investigate the chemical states and electronic states of the passivated GaAs (100) surface. The results show that the sulfides of Ga and As were formed on CH3CSNH2/NH4OH solution treated GaAs(100) surface . and the oxides of Ga and As were removed . The treatment has an apparently passivating role for the GaAs. After annealing for the passivated surface , band bending effect was observed and the offset of 0.22 eV toward the higher binding energy was obtained this meant that the densenty of the states of GaAs surface was decreased.