Open AccessGROWTH DYNAMICS OF NANO-CRYSTALLINE SILICON (nc-Si:H)FILMS AND ITS COMPUTER SIMULATION
Author(s) -
Lin Hong-Yi,
Xiaoyi Wu,
Yi He,
Yanbang Chu
Publication year - 1996
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.45.655
Subject(s) - materials science , plasma enhanced chemical vapor deposition , silicon , raman spectroscopy , diffusion , nano , raman scattering , scanning electron microscope , chemical vapor deposition , scanning tunneling microscope , hydrogen , chemical engineering , analytical chemistry (journal) , nanotechnology , optoelectronics , optics , composite material , chemistry , physics , organic chemistry , engineering , chromatography , thermodynamics
The hydrogenated nano-crystalline silicon (nc-Si:H) films have attracted more attention for peoples, because of their novel structure and peculiar properties. The nc-Si: H films are prepared by the high purity hydrogen diluted methane as the reactive gases and actived at r. f. and d. c. double power sources, in a conventional plasma enhanced chemical vapor deposition (PECVD) system. The film samples have been studied by means of high-resolution electron microscopy, Raman scattering spectroscopy, scanning tunneling microscopy and other means. Based on the analysis of fabricated processes of the nc-Si: H films, a fractal growth model which called diffusion and reaction limited aggregation (DRLA) model was proposed. It is shown that results of computer simulation agree with the experimental results.