Si AND GexSi1-x GROWTH MODE STUDY BY RHEED ON H-TERMINATED VICINAL Si SUBSTRATE | Zendy

G.X. Qian | Zendy; HUANG QI | Zendy; Chen Hong | Zendy; ZHOU JUN-MING | Zendy

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Si AND GexSi1-x GROWTH MODE STUDY BY RHEED ON H-TERMINATED VICINAL Si SUBSTRATE

Author(s) -

G.X. Qian,

HUANG QI,

Chen Hong,

ZHOU JUN-MING

Publication year - 1996

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.45.647

Subject(s) - vicinal , terrace (agriculture) , materials science , substrate (aquarium) , silicon , reflection high energy electron diffraction , perpendicular , epitaxy , crystallography , optoelectronics , chemistry , nanotechnology , geometry , geology , layer (electronics) , oceanography , archaeology , organic chemistry , history , mathematics

A study of Si, GexSi1-x growth mode on H-terminated vicinal Si substrate by RHEED is presented. About 10 nm Si epilayer is required to obtain a smooth Si substrate. Bi-atomic terrace dominate on the stable surface both of Si and GexSi1-x single atomic terrace is present in the mean time. Dimer row on bi-atomic Si terrace is perpendicular to terrace edge while dimer row on GexSi1-x bi-atomic terrace is paraller to it (90°rotation). GexSi1-x bi-atomic terrace edge is more straight than Si one.

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