Open AccessSi AND GexSi1-x GROWTH MODE STUDY BY RHEED ON H-TERMINATED VICINAL Si SUBSTRATE
Author(s) -
Qian Gui,
Huang Qi,
Hong Chen,
Zhou Jun-Ming
Publication year - 1996
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.45.647
Subject(s) - vicinal , terrace (agriculture) , materials science , substrate (aquarium) , silicon , reflection high energy electron diffraction , perpendicular , epitaxy , crystallography , optoelectronics , chemistry , nanotechnology , geometry , geology , layer (electronics) , oceanography , archaeology , organic chemistry , history , mathematics
A study of Si, GexSi1-x growth mode on H-terminated vicinal Si substrate by RHEED is presented. About 10 nm Si epilayer is required to obtain a smooth Si substrate. Bi-atomic terrace dominate on the stable surface both of Si and GexSi1-x single atomic terrace is present in the mean time. Dimer row on bi-atomic Si terrace is perpendicular to terrace edge while dimer row on GexSi1-x bi-atomic terrace is paraller to it (90°rotation). GexSi1-x bi-atomic terrace edge is more straight than Si one.