DEEP LEVELS AND FREE-CARRIER COMPENSATION IN NITROGEN-IMPLANTED GaAs | Zendy

CHEN KAI-MAO | Zendy; JIN SI-XUAN | Zendy; JIA YONG-QIANG | Zendy; Qiu Su-juan | Zendy; LU YU-NAN | Zendy; HE MEI-FEN | Zendy; Liu Hongfei | Zendy

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DEEP LEVELS AND FREE-CARRIER COMPENSATION IN NITROGEN-IMPLANTED GaAs

Author(s) -

CHEN KAI-MAO,

JIN SI-XUAN,

JIA YONG-QIANG,

Qiu Su-juan,

LU YU-NAN,

HE MEI-FEN,

Liu Hongfei

Publication year - 1996

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.45.491

Subject(s) - nitrogen , deep level transient spectroscopy , annealing (glass) , materials science , ion implantation , penning trap , optoelectronics , electron , silicon , ion , chemistry , physics , organic chemistry , quantum mechanics , composite material

This work presents a detailed study of deep and shallow level defects in nitrogen implanted n-type GaAs. Deep-level transient spectroscopy (DLTS) measurements show four electron traps and one hole trap in 140 keV nitrogen implanted GaAs after a dose of 1×1013cm-2 and a thermal annealing at 800℃ for 30 min: E1(0.111) ,E2(0.234) ,E3(0.415) ,E4(0.669) ,and H(0.545). Meanwhile,only E4 and H(0.545) defects are observed in 10 keV nitrogen-implanted GaAs after a dose of 5×1014cm-2 and the same annealing treatment. It oncluded that E2 and E3 correspond to the damages due to the high-energy implantation, E4 may be complex of intrinsic defect and implantation damage, H(0.545)is a nitrogen-related deep-level and may contribute to the free-carrier compensation in the nitrogen-implanted n-type GaAs.

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