PHOTOLUMINESCENCE STUDIES OF MODULATION -DOPED STRAINED In0.60Ga0.40As/In0.52Al0.48As QUANTUM WELLS | Zendy

Shen Wen-Zhong | Zendy; TANG WEN-GUO | Zendy; Chang Yong | Zendy; Zi-Yuan Li | Zendy; SHEN XUE-CHU | Zendy; A. DIMOULAS | Zendy

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PHOTOLUMINESCENCE STUDIES OF MODULATION -DOPED STRAINED In0.60Ga0.40As/In0.52Al0.48As QUANTUM WELLS

Author(s) -

Shen Wen-Zhong,

TANG WEN-GUO,

Chang Yong,

Zi-Yuan Li,

SHEN XUE-CHU,

A. DIMOULAS

Publication year - 1996

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.45.307

Subject(s) - photoluminescence , quantum well , electron , recombination , materials science , doping , excitation , trapping , modulation (music) , condensed matter physics , spontaneous emission , atomic physics , physics , optoelectronics , optics , laser , chemistry , ecology , biochemistry , quantum mechanics , biology , acoustics , gene

The room-temperature photoluminescence (PL) spectrum of the modulation-doped strained In0.60Ga0.40As/In0.52Al0.48As multiple quantum wells (MQW) is reported. In addition to two strong PL peaks related to the recombination between electrons in the first (n = 1), second ( n = 2) subbands and heavy holes in the first ( n = 1) subband, a weak PL shoulder related to the recombination between n = 1 electrons and n = 1 light holes is obsevered at low temperatures. We demonstrate that the main mechanism of the decrease in radiative QW recombination efficiency is due to the carrier trapping on the misfit dislocations, based on the temperature and excitation power dependence of the PL peak intensity and energy and the steady-state PL model.

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