Open AccessIMPROVING THE STABILITY OF POROUS SILICON PHOTOLUMlNESCENCE BY DAMP OXIDATION
Author(s) -
Huajie Chen,
Fulong Zhang,
Honglei Fan,
Xiying Chen,
Daming Huang,
Miao Yu,
X. Y. Hou,
Li Gu-Bo
Publication year - 1996
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.45.297
Subject(s) - porous silicon , dangling bond , materials science , silicon , photoluminescence , electron paramagnetic resonance , porosity , porous medium , fourier transform infrared spectroscopy , chemical engineering , composite material , optoelectronics , nuclear magnetic resonance , physics , engineering
The bright and stable porous silicon have been obtained by using damp oxidation at moderate temperature. EPR measurements showed that the density of Si dangling bonds in the sample is lower than that by dry oxidation. We also took FTIR measurements and concluded that the stabilization of the photoluminescence from porous silicon is due to the formation of SiH(O3), SiH(SiO2) and SiH(O2) structure.