Open AccessSTUDY ON THE QUANTUM CONFINED STARK EFFECT OF InGaAs/InAlAs MULTIPLE QUANTUM WELL STRUCTURES
Author(s) -
Yu Qian,
Wang Jian-hua,
李德杰 Li Dejie,
Yutian Wang,
Yan Zhuang,
Jiang Wei,
HUANG YI,
ZHOU JUN-MING
Publication year - 1996
Publication title -
acta physica sinica
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.45.274
Subject(s) - heterojunction , molecular beam epitaxy , materials science , photocurrent , optoelectronics , superlattice , anisotropy , absorption edge , stark effect , quantum well , quantum confined stark effect , diffraction , substrate (aquarium) , absorption (acoustics) , absorption spectroscopy , spectral line , condensed matter physics , optics , epitaxy , band gap , physics , nanotechnology , layer (electronics) , laser , oceanography , astronomy , geology , composite material
The quantum confined stark effect of InGaAs/InAlAs MQW heterostructures lattice-matched to InP substrate, grown by Chinese-built molecular beam epitaxy (MBE) system, is observed by absorption photocurrent spectra measurements, as well as the anisotropic elec-troabsorption of MQWs. The structure parameters of the epitaxied materials, which can be used to fabricate waveguide MQW electroabsorption modulators, were determined from double crystal X-ray diffraction measurements and computer simulations. The theoretical calculations of absorption-edge red shift compared with experimental results shows that the built-in-potential of the p-i-n junction can not be neglected.
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom