Open AccessSTUDY ON THE QUANTUM CONFINED STARK EFFECT OF InGaAs/InAlAs MULTIPLE QUANTUM WELL STRUCTURES
Author(s) -
Q. Yu,
Jianhua Wang,
Dejie Li,
Yutian Wang,
Zhuang Yan,
Jiafu Wei,
Huang Yi,
Jian Zhou
Publication year - 1996
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.45.274
Subject(s) - heterojunction , molecular beam epitaxy , materials science , photocurrent , optoelectronics , superlattice , anisotropy , absorption edge , stark effect , quantum well , quantum confined stark effect , diffraction , substrate (aquarium) , absorption (acoustics) , absorption spectroscopy , spectral line , condensed matter physics , optics , epitaxy , band gap , physics , nanotechnology , layer (electronics) , laser , oceanography , astronomy , geology , composite material
The quantum confined stark effect of InGaAs/InAlAs MQW heterostructures lattice-matched to InP substrate, grown by Chinese-built molecular beam epitaxy (MBE) system, is observed by absorption photocurrent spectra measurements, as well as the anisotropic elec-troabsorption of MQWs. The structure parameters of the epitaxied materials, which can be used to fabricate waveguide MQW electroabsorption modulators, were determined from double crystal X-ray diffraction measurements and computer simulations. The theoretical calculations of absorption-edge red shift compared with experimental results shows that the built-in-potential of the p-i-n junction can not be neglected.