EFFECT OF c-Si/ELECTROLYTE INTERFACE ON THE INITIAL STAGE OF POROUS SILICON FORMATION | Zendy

LI Qing-shan | Zendy; Peng Li | Zendy; MA YU-RONG | Zendy; Pan Bi-Cai | Zendy; Shangda Xia | Zendy; Rongchuan Fang | Zendy

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EFFECT OF c-Si/ELECTROLYTE INTERFACE ON THE INITIAL STAGE OF POROUS SILICON FORMATION

Author(s) -

LI Qing-shan,

Peng Li,

MA YU-RONG,

Pan Bi-Cai,

Shangda Xia,

Rongchuan Fang

Publication year - 1996

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.45.244

Subject(s) - silicon , materials science , electrolyte , porous silicon , porosity , layer (electronics) , current density , chemical physics , adsorption , porous medium , chemical engineering , chemistry , nanotechnology , composite material , electrode , optoelectronics , physics , quantum mechanics , engineering

The I-V curves of the initial stage of porous silicon formation have been measured, and the amount of charge transfer for silicon atoms adsorbed different elements has been calculated. It was pointed out that there would exist a dipole layer at c-Si/electrolyte interface, which affected the formation and properties of porous silicon. The effects of HF concentration, current density and light illumination on material formation were also discussed.

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