Open AccessEFFECT OF c-Si/ELECTROLYTE INTERFACE ON THE INITIAL STAGE OF POROUS SILICON FORMATION
Author(s) -
Qingshan Liu,
Peng Li,
Ma Yu-Rong,
Pan Bi-Cai,
Shuang Xia,
Rongchuan Fang
Publication year - 1996
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.45.244
Subject(s) - silicon , materials science , electrolyte , porous silicon , porosity , layer (electronics) , current density , chemical physics , adsorption , porous medium , chemical engineering , chemistry , nanotechnology , composite material , electrode , optoelectronics , physics , quantum mechanics , engineering
The I-V curves of the initial stage of porous silicon formation have been measured, and the amount of charge transfer for silicon atoms adsorbed different elements has been calculated. It was pointed out that there would exist a dipole layer at c-Si/electrolyte interface, which affected the formation and properties of porous silicon. The effects of HF concentration, current density and light illumination on material formation were also discussed.